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Archiv-Übersicht     Angebot Nr. 13017

Angebotsdatum: 27. August 2018
Art der Stelle: Doktorarbeit
Fachgebiet: Physik > Experimentelle Physik
Titel des Themas: III-V-on-Silicon heterointerfaces: Formation, atomic and electronic structure

Institut: Photovoltaik
Adresse:
Prof. Thomas Hannappel
Gustav-Kirchoff-Str. 5
98693 Ilmenau
Tel.:    Fax.:
Bundesland: Thüringen
Homepage: http://https://www.tu-ilmenau.de/pv/
E-Mail Kontakt: mail

Beschreibung: The Department of Photovoltaics at the Faculty of Mathematics and Natural Sciences, Institute of Physics, at the Technische Universität Ilmenau is looking for a

PhD student in experimental physics

as soon as possible, for deadlines and details see also:
https://www.tu-ilmenau.de/fileadmin/media/jobundkarriere/Mitarbeiterstellen/94-2018_TU_Ilmenau.pdf

The department is one of the leading groups in the analysis of semiconductor interfaces and the development of a low-defect integration of high-performance III-V compound semiconductors with low-cost Si substrates for highly efficient solar energy conversion and optoelectronics. The position is part of a third-party project in which III-V/Si structures are prepared by metalorganic vapor deposition and characterized in terms of their atomic and electronic interface structure. To this end, we offer a unique infrastructure that includes epitaxy, in-situ spectroscopy, and in-vacuo analytics. The department is a member of the cross-faculty Institute of Micro- and Nanotechnologies offering further high-end analytics equipment and expertise. Active participation of the Ph.D. student in teaching is desired.

Besides its excellent campus, Ilmenau is a small, vivid, and affordable student city. Located virtually in the center of Germany, it is surrounded by the beautiful nature of the “Thüringer Wald” being famous for outdoor activities.

Tasks:
Independent and team-oriented development of basic and application-oriented research results within one or more of the following research areas:
• Physics and chemistry of solid-solid interfaces,
• Preparation and epitaxial growth of semiconductor films,
• Interface analysis in ultra-high vacuum with XPS, UPS, FTIR, LEED, STM, ... ,
• Optical in-situ spectroscopy,
• Photoelectron spectroscopy with synchrotron radiation.

Requirements:
The applicant should
• hold a suitable scientific degree in a natural science programme with documented above-average performance,
• have very good knowledge in semiconductor physics, epitaxy, optical spectroscopy or interfacial analysis, and
• show strong interest, commitment, good teamwork and experimental skills.

The Technische Univsersität Ilmenau is holder of the TOTAL E-Quality award. She urges women to apply. Disabled persons with the same qualifications, aptitude and professional qualifications have priority in recruitment.

Applications including the usual documents (letter of application, curriculum vitae, copies of certificates and references) should be sent by October 12th, 2018 under the name: 94/2018 to bewerbung@tu-ilmenau.de or in written form to

Technische Universität Ilmenau
Max-Planck-Ring 14
98693 Ilmenau.

For further information please do not hesitate to contact Prof. Thomas Hannappel, for contact details please see https://www.tu-ilmenau.de/pv/ .

For cost reasons, please submit a copy (no originals) of the application documents. These remain at TU Ilmenau and will not be returned. After completion of the recruitment process, the documents of unsuccessful applicants will be destroyed. If you wish to return the documents, we kindly ask you to attach an addressed and sufficiently stamped return envelope to the application. The costs incurred by the application are not covered by the TU Ilmenau.

Datenschutzerklärung TU Ilmenau:
https://www.tu-ilmenau.de/impressum/datenschutz/
Methoden: MOVPE,
RAS,
XPS/UPS/HAXPES/ARPES,
LEED,
STM,
ATR-FTIR
Anfangsdatum: 1. November 2018
Geschätzte Dauer: 3 Jahre
Bezahlung:
Papers: Supplie et al. JPCL vol. 6, p. 646, 2015, doi:10.1021/jz502526e,

Romanyuk et al. PRB vol. 94, p. 155309, 2016, doi:10.1103/PhysRevB.94.155309,

Paszuk et al. APSUSC, in print, 2018, doi:10.1016/j.apsusc.2018.07.181
Sonstiges:

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